Search results for "Nitrogen Incorporation"
showing 3 items of 3 documents
The influence of nitrogen incorporation on the optical properties of anodic Ta2O5
2012
Abstract Anodic oxides were grown on sputter-deposited Ta in different aqueous solutions. A photoelectrochemical investigation was performed in order to estimate the band gap of the films as a function of the anodizing bath composition and formation voltage, i.e. thickness. Photoelectrochemical results provided evidence of sub-band gap photocurrent for films formed in a bath containing ammonium ions at pH 9. Elemental depth profiles obtained by glow discharge optical emission spectroscopy revealed the presence of nitrogen species in the outer part of the anodic films, which is bonded to Ta according to XPS analysis. A mechanism of nitrogen incorporation is proposed in order to account for t…
Photoelectrochemical evidence of Nitrogen Incorporation during Anodizing of Sputtering-Deposited Al-Ta alloys
2016
Anodic films were grown to 20 V on sputtering-deposited Al–Ta alloys in ammonium biborate and borate buffer solutions. According to glow discharge optical emission spectroscopy, anodizing in ammonium containing solution leads to the formation of N containing anodic layers. Impedance measurements did not evidence significant differences between the dielectric properties of the anodic films as a function of the anodizing electrolyte. Photoelectrochemical investigation allowed evidencing that N incorporation induces a red-shift in the light absorption threshold of the films due to the formation of allowed localized states inside their mobility gap. The estimated Fowler threshold for the intern…
Photoelectrochemical evidence of Nitrogen Incorporation during Anodizing of valve metals alloys
2015
Amorphous and/or nanocrystalline oxide films can be easily prepared electrochemically by anodizing. The anodizing allows to grow oxides with structural and compositional features easily and strictly controlled by the process parameters.